1 n1318 low power zener diode ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/ji sq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 revised 06/2013 v ery low power zener diode with standard 10% tolerances . available with 5% tolerance by adding suffix a to type number. standard cathode - to - case polarity. ab st ra ct j unction and storage temperature range: - 65 to +175 c (derate 1mw/ c above 25 c) m aximum ratings e lect rical characteristics (t a = 25 c unless noted) nominal voltage v z @ i zt = 200 a ( volts ) t a = 25 c i r @ v r ( a ) t a = 100 c i a @ v r ( a ) t est voltage v r ( volts ) m ax reverse current 2 3.50 0 .1 1 0 1 8
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